New high speed converters operate up to 1MHz

The new high-speed converters (SiC714CD10 and SiC711CD10) combine control MOSFETs, synchronous MOSFETs, and driver circuitry into an ultra-thin, high-performance PowerPAK MLF 10x10 package. Simplifies single-phase and multi-phase DC-to-DC design flows and delivers 3% more efficiency than discrete solutions.

They are targeted at servers, routers, point-of-load (POL) converters, and 3.3V, 5V, and 12V intermediate bus architecture environments. These new devices not only save board space and power, but also have a small footprint. Achieve higher power ratings. The integration of the MOSFET and driver helps minimize parasitic leakage that can cause ringing and peaking at the switching node.

The SiC714CD10 and SiC711CD10 can be used with any PWM IC or ASIC to produce an efficient buck converter. The low-side MOSFET control pin enables pre-biased startup to prevent faulty currents from pre-charging output capacitors from causing faults, especially in POL and server applications.

The new SiC714CD10 with a nominal input voltage range of 3.3V to 16V provides 27A of continuous output current in still air and is optimized for a 10% duty cycle. The low-side MOSFET has a typical on-resistance of 3mΩ and the high-side MOSFET has an on-resistance of 10.2mΩ.

With a nominal input voltage of 3.3V to 16V and a 40% duty cycle, the SiC711CD10 provides up to 25A of continuous output current. Typical high-side and low-side MOSFETs have an on-resistance of 4mΩ.

Both devices are optimized for 12V to logic level conversion and are rated for switching frequencies from 100kHz to over 1MHz. Their PowerPAK MLF 10x10 package has low thermal resistance, and the package's simple pad geometry enables direct board layout and assembly.

JIS

Ruiye Mechanical Co., Ltd. , http://www.china-stainlesssteelflange.com